JPS641063B2 - - Google Patents
Info
- Publication number
- JPS641063B2 JPS641063B2 JP55052469A JP5246980A JPS641063B2 JP S641063 B2 JPS641063 B2 JP S641063B2 JP 55052469 A JP55052469 A JP 55052469A JP 5246980 A JP5246980 A JP 5246980A JP S641063 B2 JPS641063 B2 JP S641063B2
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- conductivity type
- forming
- semiconductor region
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 30
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 26
- 239000012535 impurity Substances 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 6
- 239000002585 base Substances 0.000 description 28
- 150000004767 nitrides Chemical class 0.000 description 16
- 239000000758 substrate Substances 0.000 description 12
- 238000000605 extraction Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 230000003321 amplification Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5246980A JPS56148863A (en) | 1980-04-21 | 1980-04-21 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5246980A JPS56148863A (en) | 1980-04-21 | 1980-04-21 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56148863A JPS56148863A (en) | 1981-11-18 |
| JPS641063B2 true JPS641063B2 (en]) | 1989-01-10 |
Family
ID=12915568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5246980A Granted JPS56148863A (en) | 1980-04-21 | 1980-04-21 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56148863A (en]) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0265682U (en]) * | 1988-11-08 | 1990-05-17 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2172744B (en) * | 1985-03-23 | 1989-07-19 | Stc Plc | Semiconductor devices |
| US4883772A (en) * | 1986-09-11 | 1989-11-28 | National Semiconductor Corporation | Process for making a self-aligned silicide shunt |
| US4983531A (en) * | 1990-02-12 | 1991-01-08 | Motorola, Inc. | Method of fabricating a single polysilicon bipolar transistor which is compatible with a method of fabricating CMOS transistors |
-
1980
- 1980-04-21 JP JP5246980A patent/JPS56148863A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0265682U (en]) * | 1988-11-08 | 1990-05-17 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56148863A (en) | 1981-11-18 |
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